Ludwig Stockmeier Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. - Online indir

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indir Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

Ludwig Stockmeier

Heavily doped silicon is required for devices such as PowerMOSFETs. For the devices to be as sufficient as possible it is necessary to lower the electrical resistivity of the silicon substrate as low as possible. Yet, during the growth of heavily n-type doped silicon by the Czochralski method dislocation formation occurs frequently, reducing yield. Thus this work covers the topics intrinsic point defects, electrical activity of dopant atoms, spreading of dislocations and facet growth. Each topic is discussed in regard of their possible impact on the formation of the dislocations. In doing so, the control of facet growth is found to be most crucial to prevent the formation of the dislocations.

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Baskı Detayları

Yazar

Ludwig Stockmeier
İsbn 10

3839613450
İsbn 13

978-3839613450
Yayınevi

Fraunhofer Verlag

Boyutlar ve boyutlar

14.81 x 1.12 x 21.01 cm
Gönderen Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

1 Ağustos 2018
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